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K4C89183AF - 288Mb x18 Network-DRAM2 Specification 288Mb x18网络DRAM2规范 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk JT 55C 55#22M PIN PLUG JT 8C 8#16 PIN PLUG Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes JT 55C 55#22 SKT PLUG

K4C89183AF_1918335.PDF Datasheet


Part No.	K4C89183AF K4C89083AF-GIFB K4C89083AF-AIFB K4C89093AF-ACFB K4C89093AF-GIFB K4C89093AF-AIFB K4C89083AF-ACFB K4C89083AF-GCF6 K4C89083AF-GIF6 K4C89083AF-AIF6 K4C89083AF-ACF6 K4C89093AF-ACF5 K4C89183AF-ACFB K4C89183AF-AIFB K4C89183AF-GCFB K4C89183AF-ACF6 K4C89163AF-ACFB K4C89163AF-GIFB K4C89163AF-AIFB K4C89183AF-GIF5 K4C89083AF-AIF5 K4C89163AF-AIF6 K4C89183AF-AIF6 K4C89163AF-AIF5 K4C89093AF-AIF6 K4C89093AF-GIF5 K4C89183AF-AIF5 K4C89093AF-GCF5 K4C89183AF-ACF5 K4C89183AF-GIF6 K4C89183AF-GIFB
Description	288Mb x18 Network-DRAM2 Specification 288Mb x18网络DRAM2规范 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk JT 55C 55#22M PIN PLUG JT 8C 8#16 PIN PLUG Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes JT 55C 55#22 SKT PLUG
File Size	1,477.34K / 55 Page
Maker	Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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